The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jul. 06, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ping-Chuan Wang, Hopewell Junction, NY (US);
Erdem Kaltalioglu, Newburgh, NY (US);
Ronald G. Filippi, Wappingers Falls, NY (US);
Cathryn J. Christiansen, Essex Junction, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76886 (2013.01); H01L 21/76802 (2013.01); H01L 21/76873 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53233 (2013.01);
Abstract
Interconnect structures and related methods of manufacture improve device reliability and performance by selectively incorporating dopants into conductive lines. Multiple seed layer deposition steps or variable trench bottom areas are used to locally control the dopant concentration within the interconnect structures at the same wiring level, which provides a robust integration approach for metallizing interconnects in future-generation technology nodes.