The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jun. 30, 2016
Lam Research Corporation, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for filling vias formed in a dielectric layer with a metal or metal alloy that has a low solubility with copper over copper containing interconnects, wherein the vias are part of a dual damascene structure with trenches and vias is provided. A sealing layer of a first metal or metal alloy that has a low solubility with copper is selectively deposited directly on the copper containing interconnects in at bottoms of the vias, wherein sidewalls of the dielectric layer forming the vias are exposed to the depositing the sealing layer, and wherein the first metal or metal alloy that has a low solubility is selectively deposited to only form a layer on the copper containing interconnects. A via fill of a second metal or metal alloy that has a low solubility with copper is electrolessly deposited over the sealing layer, which fills the vias.