The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Jan. 27, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ming-Huei Weng, New Taipei, TW;

Chen-Yu Liu, Kaohsiung, TW;

Ching-Yu Chang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); G03F 7/039 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); H01L 21/0332 (2013.01);
Abstract

A lithography method is provided in accordance with some embodiments. The lithography method includes providing a substrate, forming a crosslinked layer over the substrate, wherein the crosslinked layer is in contact with the substrate, forming a patterned layer over the crosslinked layer, forming a pattern in the crosslinked layer and further in the substrate by using the patterned layer as a mask, treating the crosslinked layer by using a radiation source to transition the crosslinked layer to a de-crosslinked layer with a reduced molecular weight, and removing the de-crosslinked layer by using a solution that is not subject to cause damage on the substrate.


Find Patent Forward Citations

Loading…