The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
May. 19, 2016
Applicant:
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;
Inventors:
Joon-Hwa Bae, Suwon-si, KR;
Byoung Kwon Choo, Hwaseong-si, KR;
Jeong Kyun Na, Suwon-si, KR;
Byoung Ho Cheong, Yongin-si, KR;
Joo Woan Cho, Seongnam-si, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/268 (2006.01); H01L 33/58 (2010.01); H01L 21/339 (2006.01); H01L 21/84 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/308 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02675 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02672 (2013.01); H01L 21/3086 (2013.01); H01L 21/3105 (2013.01); H01L 27/1281 (2013.01);
Abstract
A laser crystallization method includes forming a plurality of first protrusions and depressions on a surface of an amorphous silicon layer, wherein a first protrusion and an adjacent first depression of the plurality of first protrusions and depressions, together, have a first pitch, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.