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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9766542 B1

PDFFull Text
Date of Patent:
Sep. 19, 2017

Filed:

Aug. 21, 2013

Negative chemically-amplified photoresist and imaging method thereof

Applicant:

Kempur Microelectronics, Inc., Beijing, CN;

Inventors:

Jia Sun, Beijing, CN;

Xin Chen, Beijing, CN;

Roger Sinta, Beijing, CN;

Bing Li, Beijing, CN;

Cuimei Diao, Beijing, CN;

Haibo Li, Beijing, CN;

Xiantao Han, Beijing, CN;

Assignee:

KEMPUR MICROELECTRONICS, INC., Beijing, CN;

Attorney:

Caesar Rivise, PC

Primary Examiner:

Sin Lee

Int. Cl.
CPC ...
G03F 7/038 (2006.01); G03F 7/004 (2006.01); G03F 7/30 (2006.01); G03F 7/38 (2006.01); G03F 7/32 (2006.01); G03F 7/40 (2006.01); G03F 7/20 (2006.01); G03F 7/16 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0382 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/168 (2013.01); G03F 7/20 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01);
Abstract

Provided are a novel negative chemically-amplified photoresist and an imaging method thereof. The negative chemically-amplified photoresist comprises phenol resin, a photo-acid generator, a cross-linking agent, an alkaline additive, a sensitizing agent and a photoresist solvent, wherein the phenol resin is a host material of the novel negative chemically-amplified photoresist; the photo-acid generator is capable of generating an acid with a certain strength under illumination; and the cross-linking agent can undergo a condensation reaction with a phenolic hydroxyl group or an ortho-/para-hydroxymethyl functional group. The imaging method of the novel negative chemically-amplified photoresist comprises coating, baking, exposure, baking, developing and other steps. The chemically-amplified negative photoresist of the present invention can improve the resolution and photospeed of photoresists effectively. And meanwhile, the chemically-amplified negative photoresist, for which the ancillaries used is the same as that used for positive photoresists, is applicable in the fields of manufacture of top-grade integrated circuits, flat panel displays and LED chips.

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