The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Nov. 01, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Yin-Cheng Cheng, Taichung, TW;
Po-Lun Cheng, Kaohsiung, TW;
Ming-Chih Hsu, Tainan, TW;
Ya-Chen Chang, Taichung, TW;
Hsien-Yao Chu, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a gate structure is formed on the substrate, a spacer is formed around the gate structure, and an epitaxial layer is formed in the substrate adjacent to the spacer. Preferably, the step of forming the epitaxial layer further includes: forming a buffer layer in the substrate; forming a bulk layer on the buffer layer; forming a linear gradient cap on the bulk layer, and forming a silicon cap on the linear gradient cap. Preferably, the etching to deposition ratio of the linear gradient cap is greater than 50% and less than 100%.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile