The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Apr. 20, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Wei Gao, Singapore, SG;

Manjunatha Prabhu, Singapore, SG;

Chien-Hsin Lee, Singapore, SG;

Xiangxiang Lu, Singapore, SG;

Vaddagere Nagaraju Vasantha Kumar, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 27/082 (2006.01); H01L 29/06 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1008 (2013.01); H01L 27/082 (2013.01); H01L 29/0649 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01);
Abstract

Integrated circuits with lateral bipolar transistors and methods for fabricating the same are provided. An exemplary integrated circuit includes a semiconductor layer overlying an insulator layer. The semiconductor layer includes a first region having a first thickness and a trench region having a second thickness less than the first thickness. The integrated circuit further includes an isolation region formed over the trench region of the semiconductor layer. Also, the integrated circuit includes a lateral bipolar transistor including a base formed in the trench region of the semiconductor layer, an emitter, and a collector.


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