The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
May. 21, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76229 (2013.01); H01L 29/0657 (2013.01);
Abstract
A semiconductor structure includes a semiconductor substrate, a first active area, a second active area, a first trench, at least one raised portion, and a first dielectric. The first active area is in the semiconductor substrate. The second active area is in the semiconductor substrate. The first trench is in the semiconductor substrate and separates the first active area and the second active area from each other. The raised portion is raised from the semiconductor substrate and is disposed in the first trench. The first dielectric is in the first trench and covers the raised portion.