The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
May. 23, 2016
Micron Technology, Inc., Boise, ID (US);
Srinivas Pulugurtha, Boise, ID (US);
Sourabh Dhir, Boise, ID (US);
Rajesh N. Gupta, Devarabisnahalli, IN;
Sanh D. Tang, Boise, ID (US);
Si-Woo Lee, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method for memory device fabrication includes forming a plurality of continuous fins on a substrate. An insulator material is formed around the fins. The continuous fins are etched into segmented fins to form exposed areas between the segmented fins. An insulator material is formed in the exposed areas wherein the insulator material in the exposed areas is formed higher than the insulator material around the fins. A metal is formed over the fins and the insulator material. The metal formed over the exposed areas is formed to a shallower depth than over the fins.