The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Oct. 23, 2015
International Business Machines Corporation, Armonk, NY (US);
Pouya Hashemi, White Plains, NY (US);
Pranita Kerber, Mount Kisco, NY (US);
Christine Q. Ouyang, Yorktown Heights, NY (US);
Alexander Reznicek, Troy, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a first fin structure having a first strain located on a surface of a first insulator layer portion. The first fin structure includes a first doped silicon germanium alloy fin portion having a first germanium content and a silicon germanium alloy fin portion having a third germanium content. A second fin structure having a second strain is located on a surface of a second insulator layer portion. The second fin structure includes a second doped silicon germanium alloy fin portion having a second germanium content and a silicon germanium alloy fin portion having the third germanium content, wherein the first germanium content differs from the second germanium content and the third germanium content is greater than the first and second germanium contents, and wherein the first strain differs from the second strain.