The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Oct. 27, 2015
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Pin-Hong Chen, Yunlin County, TW;
Kuo-Chih Lai, Tainan, TW;
Chia-Chang Hsu, Kaohsiung, TW;
Chun-Chieh Chiu, Keelung, TW;
Li-Han Chen, Tainan, TW;
Min-Chuan Tsai, New Taipei, TW;
Kuo-Chin Hung, Changhua County, TW;
Wei-Chuan Tsai, Changhua County, TW;
Hsin-Fu Huang, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/665 (2013.01); H01L 21/28518 (2013.01); H01L 29/785 (2013.01); H01L 29/7845 (2013.01);
Abstract
A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.