The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jun. 24, 2014
Infineon Technologies Ag, Neubiberg, DE;
Johannes Laven, Taufkirchen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Stephan Voss, Munich, DE;
Alexander Breymesser, Villach, AT;
Alexander Susiti, Villach, AT;
Shuhai Liu, Villach, AT;
Helmut Oefner, Zorneding, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.