The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Aug. 01, 2016
Sensor Electronic Technology, Inc., Columbia, SC (US);
Michael Shur, Latham, NY (US);
Rakesh Jain, Columbia, SC (US);
Maxim S. Shatalov, Columbia, SC (US);
Alexander Dobrinsky, Loudonville, NY (US);
Jinwei Yang, Columbia, SC (US);
Remigijus Gaska, Columbia, SC (US);
Mikhail Gaevski, West Columbia, SC (US);
Sensor Electronic Technology, Inc., Columbia, SC (US);
Abstract
A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.