The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Oct. 02, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chia Chang Hsu, Kaohsiung, TW;
Chun-Hsien Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/76819 (2013.01); H01L 21/76853 (2013.01); H01L 21/76897 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate.