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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9748232 B1

PDFFull Text
Date of Patent:
Aug. 29, 2017

Filed:

Mar. 25, 2015

Semiconductor device structure and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Ming-Chang Lee, Hsinchu, TW;

Chung-Tsun Sun, Hsinchu, TW;

Chia-Der Chang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Tod T Van Roy

Assistant Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 27/02 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/285 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 27/0207 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 21/26506 (2013.01); H01L 21/28518 (2013.01); H01L 21/76831 (2013.01); H01L 21/76897 (2013.01); H01L 21/823475 (2013.01); H01L 29/165 (2013.01); H01L 29/665 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region and a first drain region. The semiconductor device structure includes a first gate over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a first contact structure over the first source region. The first contact structure is electrically connected to the first source region. The semiconductor device structure includes a second contact structure over the first drain region. The second contact structure is electrically connected to the first drain region. The semiconductor device structure includes a conductive layer electrically connecting the first gate to the first contact structure and the second contact structure.

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