The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
May. 03, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Chun Chen, Hsinchu County, TW;
Ping-Chen Chang, Pingtung County, TW;
Tien-Hao Tang, Hsinchu, TW;
Kuan-Cheng Su, Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A fin type ESD protection device includes at least one first fin, at least one second fin, and at least one gate structure. The first fin is disposed on a semiconductor substrate, and a source contact contacts the first fin. The second fin is disposed on the semiconductor substrate, and a drain contact contacts the second fin. The first fin and the second fin extend in a first direction respectively, and the first fin is separated from the second fin. The gate structure is disposed between the source contact and the drain contact. The first fin is separated from the drain contact, and the second fin is separated from the source contact.