The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Nov. 18, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Jung Liu, Hsinchu, TW;

Huan-Wei Wu, New Taipei, TW;

Chester Tang, Kaohsiung, TW;

Joung-Wei Liou, Zhudong Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); C09D 5/00 (2006.01); C09D 5/24 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); C09D 5/008 (2013.01); C09D 5/24 (2013.01); H01L 21/02118 (2013.01); H01L 21/02203 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract

A method for manufacturing a semiconductor structure is provided. The method for manufacturing a semiconductor structure includes forming an organosilicon layer over a substrate and etching the organosilicon layer to have a trench. The method for manufacturing a semiconductor structure further includes forming a conductive structure in the trench. In addition, the organosilicon layer is made of a material including Si—C bonding and Si—O bonding, and a ratio of an amount of the Si—C bonding to an amount of the Si—O bonding is greater than about 0.2.


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