The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Jul. 20, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Yi-Fan Li, Tainan, TW;
Li-Wei Feng, Kaohsiung, TW;
Li-Chieh Hsu, Taichung, TW;
Chun-Jen Chen, Tainan, TW;
I-Cheng Hu, Kaohsiung, TW;
Tien-I Wu, Taoyuan, TW;
Yu-Shu Lin, Pingtung County, TW;
Neng-Hui Yang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of fabricating an epitaxial layer includes providing a silicon substrate. A dielectric layer covers the silicon substrate. A recess is formed in the silicon substrate and the dielectric layer. A selective epitaxial growth process and a non-selective epitaxial growth process are performed in sequence to respectively form a first epitaxial layer and a second epitaxial layer. The first epitaxial layer does not cover the top surface of the dielectric layer. The recess is filled by the first epitaxial layer and the second epitaxial layer. Finally, the first epitaxial layer and the second epitaxial layer are planarized.