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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9746768 B1

PDFFull Text
Date of Patent:
Aug. 29, 2017

Filed:

Jan. 24, 2014

Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Ryuji Ohnishi, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Noriaki Fujitani, Toyama, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Cynthia Hamilton

Int. Cl.
CPC ...
G03F 7/11 (2006.01); H01L 21/027 (2006.01); G03F 7/004 (2006.01); C08G 16/02 (2006.01); C08G 8/14 (2006.01); G03F 7/09 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01); G03F 7/095 (2006.01);
U.S. Cl.
CPC ...
G03F 7/004 (2013.01); C08G 8/14 (2013.01); C08G 16/025 (2013.01); C08G 16/0268 (2013.01); G03F 7/0046 (2013.01); G03F 7/091 (2013.01); G03F 7/20 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); H01L 21/0274 (2013.01); G03F 7/095 (2013.01);
Abstract

There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted Cether compound as a solvent.

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