logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9741807 B1

PDFFull Text
Date of Patent:
Aug. 22, 2017

Filed:

Nov. 23, 2016

Finfet device with vertical silicide on recessed source/drain epitaxy regions

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Keith E. Fogel, Hopewell Junction, NY (US);

Pranita Kerber, Mount Kisco, NY (US);

Qiqing C. Ouyang, Yorktown Heights, NY (US);

Alexander Reznicek, Troy, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Long K Tran

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 27/088 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/456 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method of forming a semiconductor device that includes forming a fin structure from a semiconductor substrate, and forming a gate structure on a channel region portion of the fin structure. A source region and a drain region are formed on a source region portion and a drain region portion of the fin structure on opposing sides of the channel portion of the fin structure. At least one sidewall of the source region portion and the drain region portion of the fin structure is exposed. A metal semiconductor alloy is formed on the at least one sidewall of the source region portion and the drain region portion of the fin structure that is exposed.

Find Patent Forward Citations

Fogel, Keith. (2017). Finfet device with vertical silicide on recessed source/drain epitaxy regions (U.S. Patent No. 9741807). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9741807

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…