The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Mar. 31, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Vishal Sipani, Boise, ID (US);

Anton J. deVilliers, Clifton Park, NY (US);

William R. Brown, Boise, ID (US);

Shane J. Trapp, Boise, ID (US);

Ranjan Khurana, Boise, ID (US);

Kevin R. Shea, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/22 (2006.01); H01L 21/266 (2006.01); H01L 21/32 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01L 21/0273 (2013.01); H01L 21/02642 (2013.01); H01L 21/0337 (2013.01); H01L 21/22 (2013.01); H01L 21/266 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32 (2013.01); H01L 21/76816 (2013.01);
Abstract

A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.


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