The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Nov. 02, 2015
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Mao-Lin Huang, Hsinchu, TW;
Chien-Hsun Wang, Hsinchu, TW;
Chun-Hsiung Lin, Zhubei, TW;
Meng-Ku Chen, New Taipei, TW;
Li-Ting Wang, Hsinchu, TW;
Hung-Ta Lin, Hsinchu, TW;
Abstract
A semiconductor devices and method of formation are provided herein. A semiconductor device includes a gate structure over a channel and an active region adjacent the channel. The active region includes a repaired doped region and a growth region over the repaired doped region. The repaired doped region includes a first dopant and a second dopant, where the second dopant is from the growth region. A method of forming a semiconductor device includes increasing a temperature during exposure to at least one of dopant(s) or agent(s) to form an active region adjacent a channel, where the active region includes a repaired doped region and a growth region over the repaired doped region.