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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9734989 B1

PDFFull Text
Date of Patent:
Aug. 15, 2017

Filed:

Sep. 03, 2013

Method for manufacturing semiconductor device, ion beam etching device, and control device

Applicant:

Canon Anelva Corporation, Asao-ku, Kawasaki-shi, Kanagawa, JP;

Inventors:

Yoshimitsu Kodaira, Kawasaki, JP;

Yukito Nakagawa, Kawasaki, JP;

Motozo Kurita, Kawasaki, JP;

Assignee:

CANON ANELVA CORPORATION, Kawasaki-Shi, Kanagawa, JP;

Attorney:

Buchanan Ingersoll & Rooney PC

Primary Examiner:

Roberts Culbert

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 37/32 (2006.01); H01L 21/321 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/3266 (2013.01); H01J 37/32339 (2013.01); H01J 37/32422 (2013.01); H01J 37/32715 (2013.01); H01L 21/31055 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 21/32136 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01J 2237/334 (2013.01);
Abstract

A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step. By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrateis corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamberis caused to be different between a position facing a central portion in the plane of the substrateand a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrateand the etching rate in the outer peripheral portion in the substrate planeare caused to be different.

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