The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Dec. 10, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yu Ching Lee, Kaohsiung, TW;
Jian-Hong Lin, Yunlin, TW;
Te-Liang Lee, Hsinchu, TW;
Jyh-Weei Hsia, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
In some embodiments, in a method for a semiconductor device having an interconnect structure, a design layout is received. A metal line in the design layout is identified, which has at least one via thereon and does not couple downward with an oxide diffusion region. The area of a gate oxide coupled with the metal line is obtained from the design layout. The method comprises determining whether the area of the gate oxide is greater than a first predetermined value. When the area of the gate oxide is greater than the first predetermined value, a charge release path is coupled with the metal line.