The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Oct. 26, 2015
Applicants:
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventors:
Da-Ming Zhuang, Beijing, CN;
Ming Zhao, Beijing, CN;
Ming-Jie Cao, Beijing, CN;
Li Guo, Beijing, CN;
Leng Zhang, Beijing, CN;
Yao-Wei Wei, Beijing, CN;
Assignees:
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); B05D 5/12 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); B28B 3/00 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B28B 3/00 (2013.01); C23C 14/086 (2013.01); H01B 1/08 (2013.01); H01J 37/3429 (2013.01); H01L 29/24 (2013.01); H01L 29/78693 (2013.01);
Abstract
An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5˜2.