The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Jun. 19, 2013
Applicant:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Inventors:
Ying Zhang, Santa Clara, CA (US);
Steven Sherman, Newton, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28088 (2013.01); H01L 21/28114 (2013.01); H01L 29/401 (2013.01); H01L 29/42364 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/78 (2013.01); H01L 21/31105 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/32131 (2013.01); H01L 21/32136 (2013.01); H01L 29/517 (2013.01);
Abstract
A replacement metal gate transistor is described. Various examples provide a replacement metal gate transistor including a trench, a first sidewall and a second sidewall. A layer is disposed in the trench where the layer has a bottom section disposed on a bottom of the trench and sidewall sections disposed on the first and second sidewalls, wherein the sidewall sections of the layer are at least 50% thinner than the bottom section of the layer.