The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Oct. 27, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Tsung-Hsing Yu, Taipei, TW;
Yeh Hsu, Taoyuan County, TW;
Chia-Wen Liu, Taipei, TW;
Jean-Pierre Colinge, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); H01L 21/28017 (2013.01); H01L 29/4238 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/4983 (2013.01); H01L 29/66439 (2013.01); H01L 29/66666 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01); H01L 29/7845 (2013.01);
Abstract
A semiconductor device includes a nanowire structure and a stressor. The nanowire structure includes a first channel section and a second channel section. The stressor subjects the first channel section to a first strain level and the second channel section to a second strain level greater than the first strain level. The difference between the second strain level and the first strain level is less than the second strain level.