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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9728601 B1

PDFFull Text
Date of Patent:
Aug. 08, 2017

Filed:

Mar. 02, 2016

Semiconductor devices including active fins and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Dong-Woo Kim, Incheon, KR;

Shigenobu Maeda, Seongnam-si, KR;

Young-Moon Choi, Seoul, KR;

Yong-Bum Kwon, Yongin-si, KR;

Chang-Woo Sohn, Hwaseong-si, KR;

Do-Sun Lee, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Cuong B Nguyen

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01); H01L 29/785 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01);
Abstract

Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

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