The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Jun. 24, 2015
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Andrey Serov, San Jose, CA (US);

James K. Kai, Santa Clara, CA (US);

Yanli Zhang, San Jose, CA (US);

Henry Chien, San Jose, CA (US);

Johann Alsmeier, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01); G11C 16/04 (2006.01); H01L 29/66 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 16/0408 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 29/66666 (2013.01); H01L 29/66825 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01);
Abstract

A three dimensional NAND device includes a common vertical channel and electrically isolated control gate electrodes on different lateral sides of the channel in each device level to form different lateral portions of a memory cell in each device level. Dielectric separator structures are located between and electrically isolate the control gate electrodes. The lateral portions of the memory cell in each device level may be electrically isolated by at least one of doping ungated portions of the channel adjacent to the separator structures or storing electrons in the separator structure.


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