The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Dec. 03, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Mukta G. Farooq, Hopewell Junction, NY (US);
Joyce C. Liu, Carmel, NY (US);
Jennifer A. Oakley, Fishkill, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/538 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/0228 (2013.01); H01L 21/762 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5386 (2013.01); H01L 29/0642 (2013.01);
Abstract
Through-substrate vias (TSVs) include a strain engineering layer configured to minimize or otherwise control local stress fields. The strain engineering layer can be separate from and in addition to a TSV sidewall isolation layer that is deposited along the via sidewall surface for the purpose of electric isolation. For instance, the strain engineering layer can be a partial depth layer that extends over only a portion of the TSV sidewall.