logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9728506 B1

PDFFull Text
Date of Patent:
Aug. 08, 2017

Filed:

Dec. 03, 2015

Strain engineering devices using partial depth films in through-substrate vias

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Mukta G. Farooq, Hopewell Junction, NY (US);

Joyce C. Liu, Carmel, NY (US);

Jennifer A. Oakley, Fishkill, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Scully Scott Murphy and Presser

Frank Digiglio

Primary Examiner:

Luan C Thai

Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/538 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/0228 (2013.01); H01L 21/762 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5386 (2013.01); H01L 29/0642 (2013.01);
Abstract

Through-substrate vias (TSVs) include a strain engineering layer configured to minimize or otherwise control local stress fields. The strain engineering layer can be separate from and in addition to a TSV sidewall isolation layer that is deposited along the via sidewall surface for the purpose of electric isolation. For instance, the strain engineering layer can be a partial depth layer that extends over only a portion of the TSV sidewall.

Find Patent Forward Citations

Quick Actions:

Farooq, Mukta. (2017). Strain engineering devices using partial depth films in through-substrate vias (U.S. Patent No. 9728506). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9728506

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…