The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Mar. 13, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Wen-Yun Wang, Taipei, TW;
Ching-Yu Chang, Yilang County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Disclosed herein is a method of forming a stress relieved film stack, the method comprising forming a film stack on a first side of a substrate, the film stack comprising a plurality of film layers and creating a plurality of film stack openings according to a cutting pattern and along at least a portion of a buffer region. The plurality of film stack openings extend from a top surface of the film stack to the substrate. A deflection of the substrate may be determined, and the cutting pattern selected prior to creating the film stack openings based on the deflection of the substrate. The substrate may have a deflection of less than about 2 μm after creating the plurality of film stack openings. And at least one of the plurality of film layers may comprise one of titanium nitride, silicon carbide and silicon dioxide.