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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9725799 B1

PDFFull Text
Expired
Date of Patent:
Aug. 08, 2017

Filed:

Dec. 05, 2014

Ion beam sputtering with ion assisted deposition for coatings on chamber components

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jennifer Y. Sun, Mountain View, CA (US);

Vahid Firouzdor, San Mateo, CA (US);

Biraja Prasad Kanungo, San Jose, CA (US);

Tom K. Cho, Los Altos, CA (US);

Vedapuram S. Achutharaman, Saratoga, CA (US);

Ying Zhang, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Lowenstein Sandler LLP

Primary Examiner:

John Brayton

Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/08 (2006.01); C04B 41/50 (2006.01); C23C 14/46 (2006.01); C23C 14/58 (2006.01); H01J 37/32 (2006.01); C04B 41/87 (2006.01); C04B 41/89 (2006.01); C04B 41/00 (2006.01); C04B 41/52 (2006.01); C04B 35/505 (2006.01); C04B 35/622 (2006.01);
U.S. Cl.
CPC ...
C23C 14/088 (2013.01); C04B 35/505 (2013.01); C04B 35/62222 (2013.01); C04B 41/009 (2013.01); C04B 41/5045 (2013.01); C04B 41/52 (2013.01); C04B 41/87 (2013.01); C04B 41/89 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/46 (2013.01); C23C 14/5806 (2013.01); H01J 37/32477 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3246 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/428 (2013.01); C04B 2235/445 (2013.01); Y10T 428/26 (2015.01); Y10T 428/265 (2015.01);
Abstract

A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

Find Patent Forward Citations

Sun, Jennifer. (2017). Ion beam sputtering with ion assisted deposition for coatings on chamber components (U.S. Patent No. 9725799). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9725799

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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