The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Feb. 10, 2012
Tien-chih Cheng, Hsin-Chu, TW;
Hung-wen Chang, Hsin-Chu, TW;
Du-cheng Wang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods for removing particles from a wafer for photolithography. A method is provided including providing a semiconductor wafer; attaching a polyimide layer to a backside of the semiconductor wafer; and performing an etch on an active surface of the semiconductor wafer; wherein particles that impinge on the backside during the etch are captured by the polyimide layer. In another method, includes attaching a layer of polyimide film to a backside of a semiconductor wafer; dry etching a material on an active surface of the semiconductor wafer; depositing of an additional layer of material on the active surface of the semiconductor wafer; removing the layer of polyimide film from the backside of the semiconductor wafer; patterning the layer of material using an immersion photolithography process to expose a photoresist on the active surface of the wafer; and repeating the attaching, dry etching, depositing, removing and patterning steps.