The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Jun. 09, 2011
Applicants:

Jack Chen, Fremont, CA (US);

Andrew D. Bailey, Iii, Pleasanton, CA (US);

Iqbal Shareef, Fremont, CA (US);

Inventors:

Jack Chen, Fremont, CA (US);

Andrew D. Bailey, III, Pleasanton, CA (US);

Iqbal Shareef, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05C 11/00 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02087 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01L 21/6708 (2013.01); H01L 21/67051 (2013.01); H01L 21/67069 (2013.01); C23C 16/455 (2013.01);
Abstract

A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.


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