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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9716107 B1

PDFFull Text
Date of Patent:
Jul. 25, 2017

Filed:

Feb. 16, 2015

Composite substrate

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Makoto Kawai, Annaka, JP;

Shigeru Konishi, Annaka, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Minh-Loan Tran

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); C30B 29/06 (2006.01); C30B 33/06 (2006.01); B32B 9/04 (2006.01); B32B 37/00 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); B32B 9/04 (2013.01); B32B 37/025 (2013.01); C30B 29/06 (2013.01); C30B 33/06 (2013.01); H01L 21/76254 (2013.01); H01L 21/76841 (2013.01); H01L 21/76846 (2013.01); H01L 21/84 (2013.01); H01L 29/66772 (2013.01); H01L 29/7812 (2013.01); B32B 2255/20 (2013.01); B32B 2307/206 (2013.01); B32B 2313/00 (2013.01); B32B 2315/02 (2013.01); B32B 2315/08 (2013.01); B32B 2457/14 (2013.01);
Abstract

This composite substrate has a single-crystal semiconductor thin film () provided to at least the front surface of an inorganic insulating sintered-body substrate () having a thermal conductivity of at least 5 W/m·K and a volume resistivity of at least 1×10Ω·cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate () and the single-crystal semiconductor thin film (), a silicon coating layer () comprising polycrystalline silicon or amorphous silicon. As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved.

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