The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Jun. 27, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Cheng-Ta Wu, Chiayi County, TW;
Cheng-Wei Chen, Tainan, TW;
Hong-Yi Wu, Hsinchu, TW;
Shiu-Ko Jangjian, Tainan, TW;
Wei-Ming You, Taipei, TW;
Ting-Chun Wang, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/02609 (2013.01); H01L 21/02667 (2013.01); H01L 21/28035 (2013.01); H01L 21/28088 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823481 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/26506 (2013.01);
Abstract
A FinFET structure includes a substrate, a plurality of stripes, a metal gate and an oxide material. The stripes are on the substrate. The metal gate is on a sidewall and a top surface of one of the stripes. The oxide material is between the metal gate and the stripes. An average roughness of an interface between the metal gate and the oxide material is in a range of from about 0.1 nm to about 0.2 nm.