The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Jun. 04, 2014
Applicant:

Cymer, Llc, San Diego, CA (US);

Inventors:

Ivan Lalovic, San Francisco, CA (US);

Omar Zurita, San Diego, CA (US);

Gregory Allen Rechtsteiner, San Diego, CA (US);

Paolo Alagna, Leuven, BE;

Simon Hsieh, Taipei, TW;

Jason J. Lee, Beaverton, OR (US);

Rostislav Rokitski, La Jolla, CA (US);

Rui Jiang, San Diego, CA (US);

Assignee:

Cymer, LLC, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/68 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70358 (2013.01); G03F 7/70041 (2013.01);
Abstract

A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.


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