The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Apr. 08, 2011
David S. Marx, Newbury Park, CA (US);
David L. Grant, Newbury Park, CA (US);
David S. Marx, Newbury Park, CA (US);
David L. Grant, Newbury Park, CA (US);
Rudolph Technologies, Inc., Budd Lake, NJ (US);
Abstract
A device () and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device () is comprised of a source/receiver section () having a broadband source (), a receiver () and a signal processing section (). An interferometer () separates or combines measurement and reference light and has a measurement leg () and a reference leg (), and a reference mirror (). The device () analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.