The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Aug. 31, 2015
Applicants:

Stmicroelectronics SA, Montrouge, FR;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Laurent Favennec, Villard Bonnot, FR;

Didier Dutartre, Meylan, FR;

Francois Roy, Seyssins, FR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/11 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14612 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 31/11 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method of manufacturing a pinned photodiode, including: forming a region of photon conversion into electric charges of a first conductivity type on a substrate of the second conductivity type; coating said region with a layer of a heavily-doped insulator of the second conductivity type; and annealing to ensure a dopant diffusion from the heavily-doped insulator layer.


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