The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Oct. 11, 2016
Globalfoundries Inc., Grand Cayman, KY;
Jiehui Shu, Clifton Park, NY (US);
Qiang Fang, Ballston Lake, NY (US);
Daniel W. Fisher, Clifton Park, NY (US);
Haigou Huang, Rexford, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Haifeng Sheng, Rexford, NY (US);
Zhiguo Sun, Halfmoon, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods of lithographic patterning and structures formed by lithographic patterning. A hardmask layer is formed on a dielectric layer, a feature is formed on the hardmask layer, and a mandrel is formed that extends in a first direction across the first feature. The mandrel and the hardmask layer beneath the mandrel are removed to pattern the hardmask layer with the feature masking a section of the hardmask layer. After the hardmask layer is patterned, the dielectric layer is etched to form a first trench and a second trench that are separated by a section of the dielectric layer masked by the section of the hardmask layer. The first trench and the second trench are filled with a conductor layer to respectively form a first wire and a second wire that is separated from the first wire by the section of the dielectric layer.