The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Jul. 28, 2015
Jong-su Kim, Seoul, KR;
Dong-woon Park, Seoul, KR;
Tae-hoi Park, Hwaseong-si, KR;
Yong-kug Bae, Hwaseong, KR;
Tae-hwan OH, Goyang-si, KR;
Chang-hoon Lee, Yongin-si, KR;
Boo-hyun Ham, Yongin-si, KR;
Jong-Su Kim, Seoul, KR;
Dong-Woon Park, Seoul, KR;
Tae-Hoi Park, Hwaseong-si, KR;
Yong-Kug Bae, Hwaseong, KR;
Tae-Hwan Oh, Goyang-si, KR;
Chang-Hoon Lee, Yongin-si, KR;
Boo-Hyun Ham, Yongin-si, KR;
Abstract
In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.