The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Aug. 31, 2009
Applicants:
Che-hao Chang, Hsinchu, TW;
Cheng-hao Hou, Hsinchu, TW;
Chen-hua Yu, Hsin-Chu, TW;
Tai-bor Wu, Hsinchu, TW;
Inventors:
Che-Hao Chang, Hsinchu, TW;
Cheng-Hao Hou, Hsinchu, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Tai-Bor Wu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01); H01L 21/316 (2006.01); C23C 16/02 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/314 (2006.01); H01L 21/318 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31645 (2013.01); C23C 16/0272 (2013.01); C23C 16/308 (2013.01); C23C 16/40 (2013.01); C23C 16/45525 (2013.01); H01L 21/28194 (2013.01); H01L 21/28202 (2013.01); H01L 21/3141 (2013.01); H01L 21/3145 (2013.01); H01L 21/3185 (2013.01); H01L 21/31641 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate, forming an interfacial layer on the substrate by treating the substrate with radicals, and forming a high-k dielectric layer on the interfacial layer. The radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals.