The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Oct. 03, 2016
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Yukio Inazuki, Jyoetsu, JP;
Takashi Yoshii, Jyoetsu, JP;
Toyohisa Sakurada, Jyoetsu, JP;
Akira Ikeda, Jyoetsu, JP;
Hideo Kaneko, Jyoetsu, JP;
Satoshi Watanabe, Jyoetsu, JP;
Yoshio Kawai, Jyoetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/32 (2012.01); G03F 1/38 (2012.01); G03F 1/00 (2012.01); G03F 1/50 (2012.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01); G03F 1/0046 (2013.01); G03F 1/0076 (2013.01); G03F 1/32 (2013.01); G03F 1/38 (2013.01); G03F 1/50 (2013.01);
Abstract
A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate includes forming the silicon-containing inorganic film such that a surface has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent, the silicon-containing inorganic film being an SiO film or an SiON film and serving as a hard mask film.