The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Jun. 26, 2014
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Wei Feng Qu, Takasaki, JP;
Fumio Tahara, Annaka, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A silicon wafer heat treatment method includes: placing a silicon wafer on a SiC jig and into a heat treatment furnace; performing heat treatment on the silicon wafer in the heat treatment furnace in a first non-oxidizing atmosphere; reducing the temperature; and carrying the silicon wafer out of the heat treatment furnace. In the heat reduction step, after the temperature is reduced to the temperature at which the silicon wafer can be carried out of the heat treatment furnace, the first non-oxidizing atmosphere is switched to an atmosphere containing oxygen, an oxide film having a thickness of 1 to 10 nm is formed on the surface of the SiC jig in the atmosphere containing oxygen, and the atmosphere containing oxygen is then switched to a second non-oxidizing atmosphere. A silicon wafer heat treatment method can prevent carbon contamination from a jig and an environment during a heat treatment process.