The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Dec. 14, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yuan-Chih Hsieh, Hsinchu, TW;

Li-Cheng Chu, Taipei, TW;

Hung-Hua Lin, Taipei, TW;

Chih-Jen Chan, Changhua, TW;

Lan-Lin Chao, Sindian, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/12 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); H01L 23/26 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0038 (2013.01); B81B 7/0025 (2013.01); B81C 1/00285 (2013.01); H01L 21/3223 (2013.01); H01L 23/26 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/0315 (2013.01); B81C 2203/0118 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In some embodiments, the present disclosure relates to a MEMs (microelectromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.


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