The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Apr. 16, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Wei Chang, Taichung, TW;
An-Shen Chang, Jubei, TW;
Eric Chih-Fang Liu, Taipei, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chia-Tai Lin, Taichung, TW;
Chih-Tang Peng, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A process of manufacturing a Fin-FET device, and the process includes following steps. An active fin structure and a dummy fin structure are formed from a substrate, and an isolation layer is covered over the active fin structure and the dummy fin structure. Then, the isolation layer above the dummy fin structure is removed, and the dummy fin structure is selectively etched, which a selective ratio of the dummy fin structure to the isolation layer is over 8.