The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Apr. 01, 2014
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Niskayuna, NY (US);
Andy C. Wei, Queensbury, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One method includes forming a plurality of first trenches in a semiconductor substrate to thereby define a plurality of initial fins in the substrate, removing at least one, but less than all, of the plurality of initial fins, forming a fin protection layer on at least the sidewalls of the remaining initial fins, with the fin protection layer in position, performing an etching process to extend a depth of the first trenches to thereby define a plurality of final trenches with a final trench depth, wherein the final trenches define a plurality of final fin structures that each comprise an initial fin, removing the fin protection layer, and forming a recessed layer of insulating material in the final trenches, wherein the recessed layer of insulating material has a recessed surface that exposes a portion of the final fin structures.