The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
May. 20, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kevin K. Chan, Staten Island, NY (US);
Stephan A. Cohen, Wappingers Falls, NY (US);
Alfred Grill, White Plains, NY (US);
Deborah A. Neumayer, Danbury, CT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/0228 (2013.01); H01L 21/02175 (2013.01); H01L 21/02274 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01);
Abstract
A substrate incorporating semiconductor regions electrically isolated by shallow trenches filled with hexagonal, textured or columnar boron nitride. A process for filling shallow trenches in a semiconductor substrate with columnar textured boron nitride using pulsed plasma enhanced chemical vapor deposition (Pulsed PECVD) and plasma assisted atomic layer deposition (PAALD).