The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Oct. 15, 2015
Applicant:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Inventors:

Tomoyuki Hirano, Kawasaki, JP;

Junichi Tsuchiya, Kawasaki, JP;

Rikita Tsunoda, Kawasaki, JP;

Tomonari Sunamichi, Kawasaki, JP;

Takayoshi Mori, Kawasaki, JP;

Assignee:

TOKYO OHKA KOGYO CO., LTD., Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/32 (2006.01); G03F 7/004 (2006.01); C08F 26/06 (2006.01); C08F 26/02 (2006.01); C08F 220/26 (2006.01); C08F 22/36 (2006.01); C08F 22/22 (2006.01); C08F 22/38 (2006.01); C08F 220/30 (2006.01); H01L 21/027 (2006.01); C08F 220/36 (2006.01); G03F 7/40 (2006.01); C08F 220/28 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08F 22/22 (2013.01); C08F 22/36 (2013.01); C08F 22/38 (2013.01); C08F 26/02 (2013.01); C08F 26/06 (2013.01); C08F 220/26 (2013.01); C08F 220/30 (2013.01); C08F 220/36 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/325 (2013.01); G03F 7/405 (2013.01); H01L 21/0274 (2013.01); C08F 2220/283 (2013.01); C08F 2220/285 (2013.01);
Abstract

A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, Calkyl group, Chalogenated alkyl group; Vxis divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yxis single bond or divalent linking group; Rxis substituent having nitrogen atom).


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