The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Jun. 10, 2013
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventor:

Ryoichi Matsuoka, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 15/00 (2006.01); G01N 23/225 (2006.01); H01J 37/22 (2006.01); G03F 7/20 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
G01B 15/00 (2013.01); G01N 23/2251 (2013.01); G03F 7/70633 (2013.01); H01J 37/222 (2013.01); H01J 37/28 (2013.01); G01N 2223/418 (2013.01); G01N 2223/6113 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/2817 (2013.01);
Abstract

The purpose of the present invention is to provide an overlay error measuring device for correcting a pattern displacement other than an overlay error to thereby achieve high-precision overlay error measurement. To accomplish the abovementioned purpose, the present invention proposes an overlay error measuring device which measures a dimension between a plurality of patterns belonging to different layers using a signal obtained by a charged particle beam device, and when measuring the dimension, corrects an amount corresponding to a pattern shift due to an optical proximity effect and measures the dimension between the plurality of patterns.


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